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Field effect transistor of MOS technology
MOS
MOS technology
MOSFET
Metal oxide semiconductor
Metal oxide semiconductor field-effect transistor
Metal oxide semiconductor technology
Metal-Oxide Semiconductor Field Effect Transistor
Metal-oxide semiconductor

Vertaling van "Metal oxide semiconductor technology " (Engels → Nederlands) :

TERMINOLOGIE
metal oxide semiconductor technology | MOS technology

MOS-techniek | MOS-technologie


field effect transistor of MOS technology | metal oxide semiconductor field-effect transistor | Metal-Oxide Semiconductor Field Effect Transistor | MOSFET [Abbr.]

transistor met veldeffect, vervaardigd volgens de MOS-techniek


metal oxide semiconductor | metal-oxide semiconductor | MOS [Abbr.]

metaaloxidehalfgeleider | MOS [Abbr.]
IN-CONTEXT TRANSLATIONS
with a single Charge-Couple-Device (CCD) or Complementary Metal Oxide Semiconductor (CMOS) sensor,

met één CCD-sensor (Charge-Coupled Device) of een CMOS-sensor (Complementary Metal-Oxide-Semiconductor),


with a single Charge-Couple-Device (CCD) or Complementary Metal–Oxide–Semiconductor (CMOS) sensor,

met één CCD-sensor (Charge-Coupled Device) of een CMOS-sensor (Complementary Metal-Oxide-Semiconductor),


[12] Complementary metal-oxide-semiconductor (CMOS) is the standard technology for integrated circuits in the "more Moore" track

[12] CMOS (Complementary Metal Oxide Semiconductor) is de standaardtechnologie voor geïntegreerde schakelingen bij het "meer Moore"-spoor.


The product under review is certain electronic integrated circuits known as Dynamic Random Access Memories (DRAMs) manufactured using variations of metal oxide-semiconductors (MOS) process technology, including complementary MOS types (CMOS), of all types, densities, variations, access speed, configuration, package or frame, etc. originating in the Republic of Korea (‘the product concerned’).

Het onderzoek heeft betrekking op de micro-elektronische schakelingen, DRAM's genaamd, vervaardigd in varianten van de metaaloxidehalfgeleider(MOS)-technologie, zoals complementaire MOS-types (CMOS), van alle soorten, dichtheden en varianten, ongeacht toegangssnelheid, configuratie, behuizing, frame enz., uit de Republiek Korea.


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The product under consideration and the like product are the same as that covered by the original investigation, i.e. certain electronic microcircuits known as dynamic random access memories (DRAMs), of all types, densities and variations, whether assembled, in processed wafer or chips (dies), manufactured using variations of metal oxide-semiconductors (MOS) process technology, including complementary MOS types (CMOS), of all densities (including future densities), irrespective of access speed, configuration, package or frame etc., originating in the Republic of Korea.

De herbeoordeling heeft betrekking op hetzelfde product als het oorspronkelijke onderzoek, namelijk micro-elektronische schakelingen, zogeheten DRAM's (Dynamic Random Access Memories), van alle soorten, dichtheden en varianten, al dan niet geassembleerd of in de vorm van bewerkte „wafers” of chips (dies), vervaardigd in varianten van de metaaloxidehalfgeleider-(MOS)-technologie, zoals complementaire MOS-types (CMOS), van alle dichtheden (ook toekomstige), ongeacht toegangssnelheid, configuratie, behuizing, frame, enz., uit de Republiek Korea.




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Date index: 2022-01-14
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